The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 28, 2017
Filed:
Oct. 06, 2011
Tianniu Chen, Rocky Hill, CT (US);
Nicole E. Thomas, Marlborough, MA (US);
Steven Lippy, Brookfield, CT (US);
Jeffrey A. Barnes, Bethlehem, CT (US);
Emanuel I. Cooper, Scarsdale, NY (US);
Peng Zhang, Montvale, NJ (US);
Tianniu Chen, Rocky Hill, CT (US);
Nicole E. Thomas, Marlborough, MA (US);
Steven Lippy, Brookfield, CT (US);
Jeffrey A. Barnes, Bethlehem, CT (US);
Emanuel I. Cooper, Scarsdale, NY (US);
Peng Zhang, Montvale, NJ (US);
ENTEGRIS, INC., Billerica, MA (US);
Abstract
A removal composition and process for selectively removing a first metal gate material (e.g., titanium nitride) relative to a second metal gate material (e.g., tantalum nitride) from a microelectronic device having said material thereon. The removal composition can include fluoride or alternatively be substantially devoid of fluoride. The substrate preferably comprises a high-k/metal gate integration scheme.