The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 28, 2017
Filed:
Jun. 30, 2017
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventors:
Keung Beum Kim, Hwaseong-si, KR;
HyunJong Moon, Seoul, KR;
Heeseok Lee, Suwon-si, KR;
Seung-Yong Cha, Hwaseong-si, KR;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 5/02 (2006.01); G11C 11/4093 (2006.01); H01L 27/108 (2006.01); H01L 25/065 (2006.01); G11C 11/408 (2006.01); G11C 11/4096 (2006.01); G11C 7/10 (2006.01);
U.S. Cl.
CPC ...
G11C 11/4093 (2013.01); G11C 7/1057 (2013.01); G11C 7/1084 (2013.01); G11C 11/4087 (2013.01); G11C 11/4096 (2013.01); H01L 25/0657 (2013.01); H01L 27/10897 (2013.01); H01L 2224/16145 (2013.01); H01L 2224/16225 (2013.01); H01L 2225/06513 (2013.01); H01L 2225/06544 (2013.01); H01L 2924/15192 (2013.01); H01L 2924/15311 (2013.01);
Abstract
A semiconductor memory device includes a first memory die having a first termination resistor for an on-die termination and a second memory die having a second termination resistor for an on-die termination and formed on the first memory die. Each of the first and second memory dies has a center pad type and operates based on a multi-rank structure. When the first memory die is accessed, the second termination resistor is connected to the second memory die, and when the second memory die is accessed, the first termination resistor is connected to the first memory die.