The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 28, 2017

Filed:

Feb. 12, 2013
Applicant:

Hitachi High-technologies Corporation, Tokyo, JP;

Inventors:

Shinichi Shinoda, Tokyo, JP;

Yasutaka Toyoda, Tokyo, JP;

Tsuyoshi Minakawa, Tokyo, JP;

Ryoichi Matsuoka, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06K 9/00 (2006.01); G06T 7/00 (2017.01); H01L 21/66 (2006.01); H01J 37/28 (2006.01); H01J 37/22 (2006.01);
U.S. Cl.
CPC ...
G06T 7/0044 (2013.01); G06T 7/001 (2013.01); H01J 37/222 (2013.01); H01J 37/28 (2013.01); H01L 22/12 (2013.01); G01B 2210/56 (2013.01); G06T 2207/10061 (2013.01); G06T 2207/10144 (2013.01); G06T 2207/30148 (2013.01); H01J 2237/221 (2013.01); H01J 2237/24578 (2013.01); H01J 2237/24592 (2013.01); H01J 2237/2801 (2013.01); H01J 2237/2817 (2013.01); H01L 2924/0002 (2013.01);
Abstract

Provided are an image evaluation method and an image evaluation apparatus to evaluate a two-dimensional shape and a change in shape of a pattern side wall of a semiconductor pattern based on a SEM image, thus estimating an exposure condition. To this end, a method and a device include a storage unit that stores a model indicating a relationship between a feature amount that is obtained by creating a plurality of outlines from a SEM image and an exposure condition, and outline creation parameter information corresponding to the model; an outline creation unit that creates a plurality of outlines from a SEM image using the outline creation parameter information; and an estimation unit that uses a feature amount that is found based on the plurality of outlines created by the outline creation unit and the model to find an exposure condition.


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