The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 28, 2017
Filed:
Jun. 29, 2015
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Chun-Lang Chen, Tainan, TW;
Tzung-Shiun Liu, Tainan, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 1/26 (2012.01); G03F 1/76 (2012.01); G03F 1/80 (2012.01);
U.S. Cl.
CPC ...
G03F 1/26 (2013.01); G03F 1/76 (2013.01); G03F 1/80 (2013.01);
Abstract
A phase shift mask blank includes a transparent substrate, a phase shift layer, a first hard mask layer and an opaque layer. The transparent substrate is disposed on the transparent substrate. The first hard mask layer is disposed on the phase shift layer. The phase shift layer has an etching selectivity with respect to the first hard mask layer. The opaque layer is disposed on the first hard mask layer.