The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 21, 2017
Filed:
Nov. 23, 2016
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Woojin Kim, Yongin-si, KR;
Keewon Kim, Suwon-si, KR;
S. P. Stuart Parkin, San Jose, CA (US);
Jaewoo Jeong, San Jose, CA (US);
Mahesh Govind Samant, San Jose, CA (US);
Samsung Electronics Co., Ltd., Gyeonggi-Do, KR;
International Business Machines Corporation, Armonk, NY (US);
Abstract
Example embodiments relate to magnetic memory devices and methods for manufacturing the same. The magnetic memory device includes a magnetic tunnel junction layer including a first magnetic layer, a second magnetic layer, and a first tunnel barrier layer between the first and second magnetic layers. The second magnetic layer is disposed on the first tunnel barrier layer and is in direct contact with the first tunnel barrier layer. The second magnetic layer includes cobalt-iron-beryllium (CoFeBe). A beryllium content of CoFeBe in the second magnetic layer ranges from about 2 at % to about 15 at %.