The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 21, 2017
Filed:
Dec. 09, 2016
Semiconductor Energy Laboratory Co., Ltd., Kanagawa-ken, JP;
Masashi Tsubuku, Saitama, JP;
Kazuya Sugimoto, Kanagawa, JP;
Tsutomu Murakawa, Kanagawa, JP;
Motoki Nakashima, Kanagawa, JP;
Shinpei Matsuda, Kanagawa, JP;
Noritaka Ishihara, Kanagawa, JP;
Daisuke Kurosaki, Tochigi, JP;
Toshimitsu Obonai, Tochigi, JP;
Hiroshi Kanemura, Tochigi, JP;
Junichi Koezuka, Tochigi, JP;
Abstract
A transistor in which a change in characteristics is small is provided. A circuit, a semiconductor device, a display device, or an electronic device in which a change in characteristics of the transistor is small is provided. The transistor includes an oxide semiconductor; a channel region is formed in the oxide semiconductor; the channel region contains indium, an element M, and zinc; the element M is one or more selected from aluminum, gallium, yttrium, tin, boron, silicon, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, and magnesium; a gate insulator contains silicon and oxygen whose atomic number is 1.5 times or more as large as the atomic number of silicon; the carrier density of the channel region is higher than or equal to 1×10cmand lower than or equal to 5×10cm; and the energy gap of the channel region is higher than or equal to 2.7 eV and lower than or equal to 3.1 eV.