The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 21, 2017
Filed:
May. 14, 2016
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Chung-Chiang Wu, Taichung, TW;
Chia-Ching Lee, New Taipei, TW;
Hsueh-Wen Tsau, Miaoli County, TW;
Chun-Yuan Chou, Taipei, TW;
Cheng-Yen Tsai, New Taipei, TW;
Da-Yuan Lee, Hsinchu County, TW;
Ming-Hsing Tsai, Hsinchu County, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/52 (2006.01); H01L 21/4763 (2006.01); H01L 21/44 (2006.01); H01L 29/66 (2006.01); H01L 23/528 (2006.01); H01L 21/311 (2006.01); H01L 21/768 (2006.01); H01L 23/532 (2006.01); H01L 29/49 (2006.01);
U.S. Cl.
CPC ...
H01L 23/528 (2013.01); H01L 21/31133 (2013.01); H01L 21/31138 (2013.01); H01L 21/76879 (2013.01); H01L 23/53228 (2013.01); H01L 23/53257 (2013.01); H01L 23/53261 (2013.01); H01L 29/4966 (2013.01);
Abstract
A semiconductor structure and the method of forming the same are provided. The method of forming a semiconductor structure includes forming a recess feature in a basal layer, forming a metal layer on the basal layer, exposing the metal layer to a tungsten halide gas to form an oxygen-deficient metal layer, and forming a bulk tungsten layer on the oxygen-deficient metal layer.