The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 14, 2017
Filed:
May. 13, 2016
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Derek C. Tao, Hsinchu, TW;
Jacklyn Chang, Hsinchu, TW;
Kuoyuan (Peter) Hsu, Hsinchu, TW;
Yukit Tang, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A method of fabricating a memory includes forming a first portion of a first line in a first metal layer, forming a first portion of a second line in the first metal layer, forming a second portion of the first line in a second metal layer, and forming a second portion of the second line in a third metal layer. The first line is over a plurality of memory cells. The second line is over the plurality of memory cells, the first line is electrically isolated from the second line, and the first line and the second line extend in a same direction. The second metal layer is over the first metal layer. The third metal layer is over the second metal layer and the third metal layer is electrically isolated from the first line.