The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 14, 2017

Filed:

Aug. 07, 2015
Applicants:

The University of Queensland, St. Lucia, AU;

Rohm and Haas Electronic Materials Llc, Marlborough, MA (US);

Inventors:

James W. Thackeray, Braintree, MA (US);

Ke Du, Queensland, AU;

Peter Trefonas, III, Medway, MA (US);

Idriss Blakey, Clayfield, AU;

Andrew Keith Whittaker, Toowong, AU;

Assignees:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C08F 293/00 (2006.01); G03F 7/038 (2006.01); G03F 7/20 (2006.01); G03F 7/32 (2006.01); G03F 7/004 (2006.01); G03F 7/039 (2006.01); G03F 7/075 (2006.01); C08F 220/22 (2006.01); C09D 153/00 (2006.01); G03F 7/11 (2006.01);
U.S. Cl.
CPC ...
C08F 293/00 (2013.01); C08F 220/22 (2013.01); C08F 293/005 (2013.01); C09D 153/00 (2013.01); G03F 7/0046 (2013.01); G03F 7/038 (2013.01); G03F 7/0382 (2013.01); G03F 7/0392 (2013.01); G03F 7/0758 (2013.01); G03F 7/2004 (2013.01); G03F 7/2059 (2013.01); G03F 7/322 (2013.01); C08F 2438/03 (2013.01); G03F 7/0048 (2013.01); G03F 7/11 (2013.01);
Abstract

A block copolymer useful in electron beam and extreme ultraviolet photolithography includes a first block with units derived from a base-solubility-enhancing monomer and an out-of-band absorbing monomer, and a second block having a low surface energy. Repeat units derived from the out-of-ban absorbing monomer allow the copolymer to absorb significantly in the wavelength range 150 to 400 nanometers. When incorporated into a photoresist composition with a photoresist random polymer, the block copolymer self-segregates to form a top layer that effectively screens out-of-band radiation.


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