The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 07, 2017

Filed:

Mar. 13, 2016
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Karthik Balakrishnan, New York, NY (US);

John Bruley, Poughkeepsie, NY (US);

Pouya Hashemi, White Plains, NY (US);

Ali Khakifirooz, Los Altos, CA (US);

John A. Ott, Greenwood Lake, NY (US);

Alexander Reznicek, Troy, NY (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/12 (2006.01); H01L 29/161 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 21/306 (2006.01); H01L 21/311 (2006.01); H01L 21/324 (2006.01); H01L 29/06 (2006.01); H01L 21/18 (2006.01); H01L 27/088 (2006.01); H01L 29/10 (2006.01);
U.S. Cl.
CPC ...
H01L 29/161 (2013.01); H01L 21/18 (2013.01); H01L 21/30604 (2013.01); H01L 21/31144 (2013.01); H01L 21/324 (2013.01); H01L 27/0886 (2013.01); H01L 29/0649 (2013.01); H01L 29/0657 (2013.01); H01L 29/1054 (2013.01); H01L 29/66818 (2013.01); H01L 29/785 (2013.01);
Abstract

Thermal condensation is employed to obtain a finned structure including strained silicon germanium fins having vertical side walls and a germanium content that may be high relative to silicon. A hard mask is used directly on a low-germanium content silicon germanium layer. The hard mask is patterned and fins are formed beneath the hard mask from the silicon germanium layer. Thermal condensation in an oxidizing ambient causes the formation of regions beneath the hard mask that have a high germanium content. The hard mask is trimmed to a target critical dimension. The regions beneath the hard mask and adjoining oxide material are subjected to reactive ion etch, resulting in the formation of high-germanium content fins with planar, vertically extending sidewalls.


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