The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 07, 2017
Filed:
Mar. 10, 2016
Samsung Electronics Co., Ltd., Suwon-si, KR;
Je-Woo Han, Hwaseong-si, KR;
Junho Yoon, Suwon-si, KR;
Kyohyeok Kim, Seoul, KR;
Dongchan Kim, Seoul, KR;
Sungyeon Kim, Jeongeup-si, KR;
Jaehong Park, Seongnam-si, KR;
Jinyoung Park, Anyang-si, KR;
KyungYub Jeon, Yongin-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Abstract
A method of fabricating a semiconductor device is disclosed. The method may include forming an target layer on a substrate, forming a mask pattern on a target layer, performing a first process to etch the target layer and form a first sub-trench, and performing a second process to further etch the target layer and form a second sub-trench. First and second sidewall patterns may be formed on a sidewall of the mask pattern to be used as an etch mask in the first and second processes, respectively. Outer sidewalls of the first and second sidewall patterns may be formed to have different angles with respect to a top surface of the substrate.