The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 07, 2017

Filed:

Jan. 13, 2017
Applicant:

Globalfoundries Inc., Grand Cayman, KY;

Inventors:

Lei Zhuang, Ridgefield, CT (US);

Lars Liebmann, Mechanicville, NY (US);

Stuart A. Sieg, Albany, NY (US);

Fee Li Lie, Albany, NY (US);

Mahender Kumar, Fishkill, NY (US);

Shreesh Narasimha, Beacon, NY (US);

Ahmed Hassan, Clifton Park, NY (US);

Guillaume Bouche, Albany, NY (US);

Xintuo Dai, Clifton Park, NY (US);

Assignee:

GLOBALFOUNDRIES Inc., Grand Cayman, KY;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 21/76 (2006.01); H01L 21/30 (2006.01); H01L 21/027 (2006.01); H01L 29/66 (2006.01); H01L 27/02 (2006.01); H01L 21/8234 (2006.01); H01L 21/762 (2006.01); H01L 21/308 (2006.01); H01L 21/28 (2006.01); H01L 21/3065 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0273 (2013.01); H01L 27/0207 (2013.01); H01L 29/66545 (2013.01); H01L 29/66795 (2013.01); H01L 21/28123 (2013.01); H01L 21/3065 (2013.01); H01L 21/3086 (2013.01); H01L 21/76224 (2013.01); H01L 21/823431 (2013.01);
Abstract

A method includes providing a semiconductor structure having a substrate including a longitudinally extending plurality of fins formed thereon. A target layout pattern is determined, which overlays active areas devices disposed on the fins. The target layout pattern includes a first group of sections overlaying devices having more fins than adjacent devices and a second group of sections overlaying devices having less fins than adjacent devices. A first extended exposure pattern is patterned into the structure, and includes extensions that extend sections of the first group toward adjacent sections of the first group. A second extended exposure pattern is patterned into the structure, and includes extensions that extend sections of the second group toward adjacent sections of the second group. Portions of the first and second extended exposure patterns are combined to form a final pattern overlaying the same active areas as the target pattern.


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