The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 07, 2017

Filed:

Aug. 29, 2016
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Yue-Der Chih, Hsinchu, TW;

Cheng-Hsiung Kuo, Jhubei, TW;

Gu-Huan Li, Zhubei, TW;

Chien-Yin Liu, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 7/00 (2006.01); G11C 7/20 (2006.01); G11C 11/406 (2006.01); G11C 11/16 (2006.01); G11C 13/00 (2006.01); G11C 5/02 (2006.01);
U.S. Cl.
CPC ...
G11C 7/20 (2013.01); G11C 5/02 (2013.01); G11C 11/1659 (2013.01); G11C 11/1677 (2013.01); G11C 11/406 (2013.01); G11C 13/0033 (2013.01); G11C 13/0064 (2013.01); G11C 13/0069 (2013.01); G11C 2013/0076 (2013.01);
Abstract

A method and a system for memory cell programming and erasing with refreshing operation are disclosed. The system includes a selecting module, a processing module and a refresh module. In the method, at first, a target memory cell from a plurality of memory cells in a memory device is selected. Thereafter, the target memory cell belonging to a line of the matrix is programmed or erased by applying a selecting voltage on the target memory cell and a location-related memory cell belonging to the line of the matrix. Then, a refreshing operation to refresh the location-related cell is performed.


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