The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 07, 2017
Filed:
Mar. 16, 2015
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Wei-Han Lai, Hsin-Chu, TW;
Ching-Yu Chang, Hsin-Chu, TW;
Cheng-Han Wu, Hsin-Chu, TW;
Siao-Shan Wang, Hsin-Chu, TW;
Chin-Hsiang Lin, Hsin-Chu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsin-Chu, TW;
Abstract
A material layer is formed over a substrate. A negative tone photoresist layer is formed over the material layer. An exposure process is performed to the negative tone photoresist layer. A post-exposure bake (PEB) process is performed to the negative tone photoresist layer. After the exposure process and the PEB process, the negative tone photoresist layer is treated with a solvent. The solvent contains a chemical having a greater dipole moment than n-butyl acetate (n-BA).