The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 07, 2017
Filed:
Feb. 29, 2016
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Inventors:
Hsun-Chuan Shih, Hsinchu County, TW;
Yuan-Chih Chu, New Taipei, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 1/24 (2012.01); G03F 1/72 (2012.01); G03F 1/22 (2012.01); G03F 1/80 (2012.01); G03F 1/84 (2012.01);
U.S. Cl.
CPC ...
G03F 1/22 (2013.01); G03F 1/72 (2013.01); G03F 1/80 (2013.01); G03F 1/84 (2013.01);
Abstract
A EUV mask comprises a low thermal expansion material (LTEM) substrate, a reflective multi-layer (ML) over the LTEM substrate, and a patterned absorber layer over the reflective ML. The reflective ML includes a defect. The EUV mask further comprises a mark associated with the defect. The mark is one of: a deposit over the patterned absorber layer at a distance offset from the defect, and a cavity into the patterned absorber layer in an area over the defect.