The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 31, 2017
Filed:
Oct. 24, 2014
Marubun Corporation, Tokyo, JP;
Toshiba Kikai Kabushiki Kaisha, Tokyo, JP;
Riken, Wako-shi, Saitama, JP;
Ulvac, Inc., Chigasaki-shi, Kanagawa, JP;
Tokyo Ohka Kogyo Co., Ltd., Kawasaki-shi, Kanagawa, JP;
Yukio Kashima, Tokyo, JP;
Eriko Matsuura, Tokyo, JP;
Mitsunori Kokubo, Numazu, JP;
Takaharu Tashiro, Numazu, JP;
Takafumi Ookawa, Numazu, JP;
Hideki Hirayama, Wako, JP;
Ryuichiro Kamimura, Susono, JP;
Yamato Osada, Susono, JP;
Satoshi Shimatani, Kawasaki, JP;
MARUBUN CORPORATION, Tokyo, JP;
TOSHIBA KIKAI KABUSHIKI KAISHA, Tokyo, JP;
RIKEN, Saitama, JP;
ULVAC, INC., Kanagawa, JP;
TOKYO OHKA KOGYO CO., LTD., Kanagawa, JP;
Abstract
A deep ultraviolet LED with a design wavelength of λ is provided that includes a reflecting electrode layer, a metal layer, a p-type GaN contact layer, and a p-type AlGaN layer that are sequentially stacked from a side opposite to a substrate, the p-type AlGaN layer being transparent to light with the wavelength of λ; and a photonic crystal periodic structure that penetrates at least the p-type GaN contact layer and the p-type AlGaN layer. The photonic crystal periodic structure has a photonic band gap.