The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 31, 2017

Filed:

Feb. 20, 2017
Applicant:

Globalfoundries Inc., Grand Cayman, KY;

Inventors:

Xunyuan Zhang, Albany, NY (US);

Sean Xuan Lin, Watervliet, NY (US);

James Jay McMahon, Clifton Park, NY (US);

Shao Beng Law, Watervliet, NY (US);

Assignee:

GLOBALFOUNDRIES INC., Grand Cayman, KY;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 23/52 (2006.01); H01L 29/40 (2006.01); H01L 21/768 (2006.01); H01L 21/288 (2006.01); H01L 23/522 (2006.01); H01L 23/532 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76816 (2013.01); H01L 21/288 (2013.01); H01L 21/7685 (2013.01); H01L 21/76813 (2013.01); H01L 21/76879 (2013.01); H01L 23/5226 (2013.01); H01L 23/53238 (2013.01);
Abstract

The present disclosure relates to semiconductor structures and, more particularly, to skip via structures and methods of manufacture. The structure includes: a first wiring layer with one or more wiring structures; an upper wiring layer with one or more wiring structures, located above the first wiring layer; a blocking material which contacts at least one of the wiring structures of the upper wiring layer; a skip via with metallization, the skip via passes through the upper wiring layer and makes contact with the one or more wiring structures of the first wiring layer; and a conductive material in the skip via above the metallization and in a via interconnect above the blocking material.


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