The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 31, 2017
Filed:
Sep. 18, 2014
Tanaka Kikinzoku Kogyo K.k., Chiyoda-ku, Tokyo, JP;
Shunichi Nabeya, Tsukuba, JP;
Ryosuke Harada, Tsukuba, JP;
Kazuharu Suzuki, Tsukuba, JP;
Takayuki Sone, Tsukuba, JP;
Michihiro Yokoo, Tsukuba, JP;
TANAKA KIKINZOKU KOGYO K.K., Tokyo, JP;
Abstract
A method for producing a nickel thin film on a Si substrate by a chemical vapor deposition method, in which the nickel thin film is formed by use of a hydrocarbon-type nickel complex represented by a following formula as a raw material compound, which is a nickel complex in which a cyclopentadienyl group (Cp) or a derivative thereof and a chain or cyclic alkenyl group having 3 to 9 carbon atoms or a derivative thereof are coordinated to nickel and an element other than carbon and hydrogen is not contained in the structure, use of hydrogen as a reaction gas, and use of a film formation pressure of 1 to 150 torr and a film formation temperature of 80 to 250° C. as film formation conditions (In the formula, X represents a chain or cyclic alkenyl group having 3 to 9 carbon atoms or a derivative thereof. Rto Rwhich are substituent groups of the cyclopentadienyl group represent CHand n represents an integer of 0 to 6).