The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 31, 2017
Filed:
May. 13, 2016
Applicant:
Asml Netherlands B.v., Veldhoven, NL;
Inventors:
Guangqing Chen, Fremont, CA (US);
Eric Richard Kent, San Jose, CA (US);
Jen-Shiang Wang, Sunnyvale, CA (US);
Omer Abubaker Omer Adam, Eindhoven, DE;
Assignee:
ASML NETHERLANDS B.V., Veldhoven, NL;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 17/50 (2006.01); G03F 7/20 (2006.01);
U.S. Cl.
CPC ...
G03F 7/706 (2013.01); G03F 7/70625 (2013.01); G03F 7/70633 (2013.01); G03F 7/70641 (2013.01); G03F 7/70683 (2013.01); G06F 17/5009 (2013.01); G06F 17/5068 (2013.01); G06F 2217/12 (2013.01); G06F 2217/14 (2013.01);
Abstract
A method of metrology target design is described. The method includes determining a sensitivity of a parameter for a metrology target design to an optical aberration, determining the parameter for a product design exposed using an optical system of a lithographic apparatus, and determining an impact on the parameter of the metrology target design based on the parameter for the product design and the product of the sensitivity and one or more of the respective aberrations of the optical system.