The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 24, 2017

Filed:

Oct. 19, 2016
Applicant:

United Microelectronics Corp., Hsin-Chu, TW;

Inventors:

Liang Yi, Singapore, SG;

Chia-Ching Hsu, Yunlin County, TW;

Shen-De Wang, Hsinchu County, TW;

Ko-Chi Chen, Taoyuan, TW;

Guoan Du, Singapore, SG;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 45/00 (2006.01); H01L 27/24 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 27/2436 (2013.01); H01L 21/76877 (2013.01); H01L 45/1233 (2013.01); H01L 45/1253 (2013.01); H01L 45/146 (2013.01); H01L 45/1608 (2013.01); H01L 45/1675 (2013.01); H01L 45/1683 (2013.01);
Abstract

The present invention provides a semiconductor device. The semiconductor device includes a contact structure disposed in a first dielectric layer, a second dielectric layer disposed on the first dielectric layer and having an opening disposed therein, a spacer disposed in the opening and partially covering the contact structure, and a resistive random-access memory (RRAM) disposed on the contact structure and directly contacting the spacer, wherein the RRAM includes a bottom electrode, a top electrode, and a switching resistance layer disposed between the bottom electrode and the top electrode.


Find Patent Forward Citations

Loading…