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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9799491 B1

PDFFull Text
Expired
Date of Patent:
Oct. 24, 2017

Filed:

May. 04, 2016

Low electron temperature etch chamber with independent control over plasma density, radical composition and ion energy for atomic precision etching

Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Leonid Dorf, San Jose, CA (US);

Kenneth S. Collins, San Jose, CA (US);

Shahid Rauf, Pleasanton, CA (US);

Kartik Ramaswamy, San Jose, CA (US);

James D. Carducci, Sunnyvale, CA (US);

Hamid Tavassoli, Cupertino, CA (US);

Olga Regelman, Daly City, CA (US);

Ying Zhang, Sunnyvale, CA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:

Fish & Richardson P.C.

Primary Examiner:

Anita Alanko

Int. Cl.
CPC ...
H01J 37/32 (2006.01); H01J 37/06 (2006.01); H01L 21/3065 (2006.01);
U.S. Cl.
CPC ...
H01J 37/32174 (2013.01); H01J 37/06 (2013.01); H01J 37/3244 (2013.01); H01J 37/32082 (2013.01); H01J 37/32422 (2013.01); H01J 37/32458 (2013.01); H01J 37/32532 (2013.01); H01J 37/32357 (2013.01); H01J 2237/3151 (2013.01); H01J 2237/3174 (2013.01); H01J 2237/334 (2013.01); H01J 2237/3348 (2013.01); H01L 21/3065 (2013.01);
Abstract

The disclosure concerns a method of operating a plasma reactor having an electron beam plasma source for independently adjusting electron beam energy, plasma ion energy and radical population. The disclosure further concerns an electron beam source for a plasma reactor having an RF-driven electrode for producing the electron beam.

Find Patent Forward Citations

Dorf, Leonid. (2017). Low electron temperature etch chamber with independent control over plasma density, radical composition and ion energy for atomic precision etching (U.S. Patent No. 9799491). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9799491

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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