The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 24, 2017

Filed:

Jul. 01, 2014
Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventors:

Yuichi Takenaga, Iwate, JP;

Katsuhiko Komori, Yamanashi, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/302 (2006.01); H01L 21/461 (2006.01); H01B 13/00 (2006.01); B44C 1/22 (2006.01); C03C 15/00 (2006.01); C03C 25/68 (2006.01); C23F 1/00 (2006.01); G05B 19/418 (2006.01); H01L 21/768 (2006.01); H01L 21/3213 (2006.01); C23C 16/04 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
G05B 19/418 (2013.01); C23C 16/045 (2013.01); H01L 21/32136 (2013.01); H01L 21/76825 (2013.01); H01L 21/76862 (2013.01); H01L 21/02164 (2013.01); H01L 21/02271 (2013.01);
Abstract

Provided is a substrate processing method of filling a recess of a predetermined uneven pattern formed on a substrate with a film forming material by performing a first film forming processing, a first etching processing and a second film forming processing on the substrate, using a vertical substrate processing apparatus and a control apparatus controlling operations of the vertical substrate processing apparatus. The method includes calculating a first film forming condition, a first etching condition, and a second film forming condition by the control apparatus such that the film forming material is filled in the recess without any void after the second film forming processing; and performing the first film forming processing, the first etching processing and the second film forming processing on the substrate based on the calculated first film forming condition, first etching condition and second film forming condition.


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