The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 24, 2017

Filed:

Dec. 30, 2015
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Inventors:

Sang-Hyun Kim, Hwaseong-si, KR;

Dong-Gun Lee, Hwaseong-si, KR;

Byoung-Hun Park, Suwon-si, KR;

Byung-Gook Kim, Seoul, KR;

Chan-Uk Jeon, Seongnam-si, KR;

Assignee:

SAMSUNG ELECTRONICS CO., LTD., Suwon-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C03C 15/00 (2006.01); G03F 7/38 (2006.01); H01L 21/027 (2006.01); G03F 1/00 (2012.01); H01L 21/311 (2006.01); H01L 27/108 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
G03F 7/38 (2013.01); G03F 1/00 (2013.01); H01L 21/0273 (2013.01); H01L 21/0274 (2013.01); H01L 21/0275 (2013.01); H01L 21/31144 (2013.01); H01L 21/76802 (2013.01); H01L 27/10814 (2013.01); H01L 27/10876 (2013.01); H01L 27/10888 (2013.01);
Abstract

A method of patterning a photoresist layer includes forming a photoresist layer on a substrate, exposing the photoresist layer to light using a first light source so as to induce a chemical change in the photoresist layer, performing a post-exposure bake process on the photoresist layer, the post-exposure bake process including irradiating the photoresist layer with at least two shots of laser light from a second light source such that the photoresist layer is heated to a first temperature, and performing a developing process on the photoresist layer after the post-exposure bake process, the development process selectively removing a portion of the photoresist layer.


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