The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 24, 2017
Filed:
Oct. 14, 2014
Applicant:
Asml Netherlands B.v., Veldhoven, NL;
Inventors:
Eelco Van Setten, Eindhoven, NL;
Natalia Viktorovna Davydova, Eindhoven, NL;
Eleni Psara, Eindhoven, NL;
Anton Bernhard Van Oosten, Eindhoven, NL;
Assignee:
ASML NETHERLANDS B.V., Veldhoven, NL;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 1/22 (2012.01); G03F 1/24 (2012.01); G03F 1/38 (2012.01); G03F 1/44 (2012.01); G03F 1/68 (2012.01); G03F 1/70 (2012.01); G03F 7/20 (2006.01);
U.S. Cl.
CPC ...
G03F 1/24 (2013.01); G03F 1/22 (2013.01); G03F 1/38 (2013.01); G03F 1/44 (2013.01); G03F 1/68 (2013.01); G03F 1/70 (2013.01); G03F 7/2004 (2013.01); G03F 7/70433 (2013.01); G03F 7/70616 (2013.01); G03F 7/70625 (2013.01); G03F 7/70683 (2013.01);
Abstract
A method of characterizing a lithographic mask type uses a mask having thereon test pattern units of linear features at different orientations. The mask is exposed, rotated by angle, exposed again, rotated by a further angle, exposed, etc. The printed features are measured to determine one or more characteristics of the mask. The method can be used to model shadowing effects of a EUV mask with a thick absorber illuminated at an angle.