The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9793187 B1

PDF
Full Text
Expired
Date of Patent:
Oct. 17, 2017

Filed:

Aug. 17, 2015
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;

Inventors:

Shih Ting Lin, Taipei, TW;

Kung-Chen Yeh, Taichung, TW;

Szu-Wei Lu, Hsin-Chu, TW;

Jing-Cheng Lin, Hsin-Chu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/18 (2006.01); H01L 23/00 (2006.01); H01L 21/56 (2006.01); H01L 21/48 (2006.01); H01L 23/28 (2006.01); H01L 23/31 (2006.01); H01L 23/12 (2006.01); H01L 23/055 (2006.01); H01L 23/367 (2006.01); H01L 25/065 (2006.01); H01L 21/683 (2006.01); H01L 23/48 (2006.01); H01L 23/498 (2006.01);
U.S. Cl.
CPC ...
H01L 23/18 (2013.01); H01L 21/4803 (2013.01); H01L 21/56 (2013.01); H01L 21/6835 (2013.01); H01L 21/6836 (2013.01); H01L 23/055 (2013.01); H01L 23/12 (2013.01); H01L 23/28 (2013.01); H01L 23/31 (2013.01); H01L 23/3135 (2013.01); H01L 23/3675 (2013.01); H01L 23/3677 (2013.01); H01L 24/80 (2013.01); H01L 24/92 (2013.01); H01L 24/94 (2013.01); H01L 24/97 (2013.01); H01L 25/0657 (2013.01); H01L 21/561 (2013.01); H01L 23/3128 (2013.01); H01L 23/481 (2013.01); H01L 23/49827 (2013.01); H01L 24/03 (2013.01); H01L 24/05 (2013.01); H01L 24/06 (2013.01); H01L 24/11 (2013.01); H01L 24/13 (2013.01); H01L 24/16 (2013.01); H01L 24/17 (2013.01); H01L 24/32 (2013.01); H01L 24/81 (2013.01); H01L 24/83 (2013.01); H01L 2221/68327 (2013.01); H01L 2221/68331 (2013.01); H01L 2221/68368 (2013.01); H01L 2224/0345 (2013.01); H01L 2224/03452 (2013.01); H01L 2224/03462 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/05144 (2013.01); H01L 2224/05147 (2013.01); H01L 2224/05155 (2013.01); H01L 2224/05166 (2013.01); H01L 2224/05171 (2013.01); H01L 2224/05624 (2013.01); H01L 2224/05639 (2013.01); H01L 2224/05644 (2013.01); H01L 2224/05647 (2013.01); H01L 2224/05684 (2013.01); H01L 2224/06181 (2013.01); H01L 2224/1132 (2013.01); H01L 2224/1144 (2013.01); H01L 2224/1145 (2013.01); H01L 2224/1146 (2013.01); H01L 2224/11334 (2013.01); H01L 2224/11424 (2013.01); H01L 2224/11452 (2013.01); H01L 2224/11462 (2013.01); H01L 2224/11464 (2013.01); H01L 2224/11849 (2013.01); H01L 2224/131 (2013.01); H01L 2224/13082 (2013.01); H01L 2224/13083 (2013.01); H01L 2224/13084 (2013.01); H01L 2224/13109 (2013.01); H01L 2224/13111 (2013.01); H01L 2224/13124 (2013.01); H01L 2224/13139 (2013.01); H01L 2224/13144 (2013.01); H01L 2224/13147 (2013.01); H01L 2224/13155 (2013.01); H01L 2224/13164 (2013.01); H01L 2224/16145 (2013.01); H01L 2224/16225 (2013.01); H01L 2224/16227 (2013.01); H01L 2224/17181 (2013.01); H01L 2224/32145 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/32245 (2013.01); H01L 2224/73204 (2013.01); H01L 2224/73253 (2013.01); H01L 2224/814 (2013.01); H01L 2224/81005 (2013.01); H01L 2224/81191 (2013.01); H01L 2224/81411 (2013.01); H01L 2224/81439 (2013.01); H01L 2224/81815 (2013.01); H01L 2224/81895 (2013.01); H01L 2224/8385 (2013.01); H01L 2224/83104 (2013.01); H01L 2224/92 (2013.01); H01L 2224/9202 (2013.01); H01L 2224/94 (2013.01); H01L 2224/97 (2013.01); H01L 2225/06513 (2013.01); H01L 2225/06517 (2013.01); H01L 2225/06568 (2013.01); H01L 2225/06589 (2013.01); H01L 2924/15311 (2013.01); H01L 2924/181 (2013.01);
Abstract

Embodiments of the present disclosure include a semiconductor device and methods of forming a semiconductor device. An embodiment is a method of forming a semiconductor device, the method including bonding a die to a top surface of a first substrate, the die being electrically coupled to the first substrate, and forming a support structure on the top surface of the first substrate, the support structure being physically separated from the die with a top surface of the support structure being coplanar with a top surface of the die. The method further includes performing a sawing process on the first substrate, the sawing process sawing through the support structure.


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