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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9793136 B1

PDFFull Text
Date of Patent:
Oct. 17, 2017

Filed:

Dec. 04, 2015

Plasma etching method

Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventors:

Kosei Ueda, Hwaseong-si, KR;

Yoshinobu Hayakawa, Miyagi, JP;

Assignee:

TOKYO ELECTRON LIMITED, Tokyo, JP;

Attorney:

Pearne & Gordon LLP

Primary Examiner:

Stephanie Duclair

Int. Cl.
CPC ...
H01B 13/00 (2006.01); C03C 15/00 (2006.01); C03C 25/68 (2006.01); C23F 1/00 (2006.01); B44C 1/22 (2006.01); H01L 21/302 (2006.01); H01L 21/461 (2006.01); H01L 21/311 (2006.01); H01L 21/768 (2006.01); H01L 21/3065 (2006.01); H01L 21/67 (2006.01); H01J 37/32 (2006.01);
U.S. Cl.
CPC ...
H01L 21/31144 (2013.01); H01J 37/32082 (2013.01); H01J 37/32192 (2013.01); H01L 21/3065 (2013.01); H01L 21/31116 (2013.01); H01L 21/67248 (2013.01); H01L 21/76804 (2013.01);
Abstract

A plasma etching method can form a hole having a required opening diameter in a silicon nitride layer, while suppressing a tip end portion of the hole from being narrowed. The plasma etching method includes a first process of supplying a processing gas containing oxygen and fluorocarbon into a plasma processing apparatus; and a second process of etching a silicon nitride layerof a processing target object with a first maskby exciting the processing gas into plasma. Further, the second process is performed in a state where an organic film ad generated from the processing gas is formed on an inner wall of an opening of the first maskby gradually reducing a temperature of the processing target object from a first temperature T1 (80° C.) to a second temperature T2 (40° C.).

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