The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 17, 2017
Filed:
Aug. 27, 2014
Nissan Chemical Industries, Ltd., Tokyo, JP;
Tomoya Ohashi, Toyama, JP;
Shigeo Kimura, Toyama, JP;
Yuki Usui, Toyama, JP;
Hiroto Ogata, Toyama, JP;
NISSAN CHEMICAL INDUSTRIES, LTD., Tokyo, JP;
Abstract
A pattern forming method which uses a resist underlayer film having resistance to a basic aqueous hydrogen peroxide solution. A pattern forming method including: a first step of applying a resist underlayer film-forming composition containing a solvent and a polymer having a weight average molecular weight of 1,000 to 100,000 and an epoxy group on a semiconductor substrate that may have an inorganic film on the surface, followed by baking, to form a resist underlayer film; a second step of forming a resist pattern on the resist underlayer film; a third step of dry etching the resist underlayer film using the resist pattern as a mask to expose a surface of the inorganic film or the semiconductor substrate; and a fourth step of wet etching the inorganic film or the semiconductor substrate using the dry-etched resist underlayer film as a mask and a basic aqueous hydrogen peroxide solution.