The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 17, 2017
Filed:
Mar. 23, 2016
Applicant:
Hitachi Kokusai Electric Inc., Tokyo, JP;
Inventors:
Takuya Joda, Toyama, JP;
Toru Kakuda, Toyama, JP;
Masahisa Okuno, Toyama, JP;
Hideto Tateno, Toyama, JP;
Assignee:
HITACHI KOKUSAI ELECTRIC INC., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 21/324 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02337 (2013.01); H01L 21/02164 (2013.01); H01L 21/02222 (2013.01); H01L 21/02271 (2013.01); H01L 21/02282 (2013.01); H01L 21/02326 (2013.01); H01L 21/3247 (2013.01);
Abstract
To improve the characteristics of a film formed on a substrate, a method of manufacturing a semiconductor device includes: loading a substrate into a processing container, the substrate being provided with a film having a silazane bond, the film being subjected to pre-baking; supplying oxygen-containing gas at a first temperature not higher than the temperature of the pre-baking; and supplying processing gas containing at least any one of steam and hydrogen peroxide at a second temperature higher than the first temperature.