The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 17, 2017

Filed:

Jul. 21, 2016
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;

Inventors:

Chung-Cheng Chou, Hsin-Chu, TW;

Yue-Der Chih, Hsin-Chu, TW;

Wen-Ting Chu, Kaohsiung, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 13/00 (2006.01); H01L 27/24 (2006.01); H01L 23/522 (2006.01); H01L 45/00 (2006.01);
U.S. Cl.
CPC ...
G11C 13/0069 (2013.01); G11C 13/0007 (2013.01); G11C 13/0097 (2013.01); H01L 23/522 (2013.01); H01L 27/2436 (2013.01); H01L 27/2463 (2013.01); H01L 45/1233 (2013.01); H01L 45/1273 (2013.01); H01L 45/146 (2013.01); H01L 45/1616 (2013.01);
Abstract

A memory architecture comprises a first memory macro comprising a first plurality of memory cells, a second memory macro comprising a second plurality of memory cells, and a control logic coupled to the first and second memory macros. The control logic is configured to write a logical state to each of the first and second pluralities of memory cells by using first and second signal levels, respectively, thereby causing the first and second memory macros to be used in first and second applications, respectively, the first and second signal levels being different and the first and second applications being different. The first and second memory macros are formed on a single chip, and wherein the first and second pluralities of the memory cells comprise a variable resistance dielectric layer formed using a single process recipe.


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