The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 10, 2017
Filed:
Sep. 07, 2016
Globalfoundries Singapore Pte. Ltd., Singapore, SG;
Bharat Bhushan, Singapore, SG;
Juan Boon Tan, Singapore, SG;
Wanbing Yi, Singapore, SG;
Pak-Chum Danny Shum, Singapore, SG;
GLOBALFOUNDRIES SINGAPORE PTE. LTD., Singapore, SG;
Abstract
Emerging memory chips and methods for forming an emerging memory chip are presented. For example, magnetoresistive random access memory (MRAM) chip magnetic shielding and vertical stacking capabilities processed at the wafer-level are disclosed. The method includes providing a magnetic shield in the through silicon vias and/or through silicon trenches surrounding or adjacent to magnetic tunnel junction (MTJ) array within the MRAM region and also at the front side and back side of the chip. Magnetic shield in the through silicon trenches connects front side and back side magnetic shield. Magnetic shield in the through silicon vias provides vertical stacking, magnetic shielding and electrical connection of the MRAM chips to form 3D IC packages. This magnetic shielding method is applicable for both in-plane and perpendicular MRAM chips. The MTJ array is formed in the MRAM region and in between adjacent inter layer dielectric (ILD) levels of the upper ILD layer in the back end of line (BEOL) of the MRAM chip.