The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 10, 2017
Filed:
Oct. 26, 2016
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Wei-De Ho, Hsinchu, TW;
Shu-Hong Lin, Hsinchu, TW;
Ya Hui Chang, Hsinchu, TW;
Chih-Jung Chiang, Hsin-Chu, TW;
Chang-Yi Tsai, New Taipei, TW;
Tsung-Lin Yang, Pingtung County, TW;
Kuei-Shun Chen, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsin-Chu, TW;
Abstract
A method includes receiving a device having a first layer and a second layer over the first layer, the first layer having a first overlay mark. The method further includes forming a first resist pattern over the second layer, the first resist pattern having a second overlay mark. The method further includes performing a first overlay measurement using the second overlay mark in the first resist pattern and the first overlay mark; and performing one or more first manufacturing processes, thereby transferring the second overlay mark into the second layer and removing the first resist pattern. The method further includes performing one or more second manufacturing processes that include forming a third layer over the second layer. After the performing of the one or more second manufacturing processes, the method includes performing a second overlay measurement using the second overlay mark in the second layer and the first overlay mark.