The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 03, 2017
Filed:
Apr. 15, 2016
Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;
Harry-Hak-Lay Chuang, Paya Lebar Crescent, SG;
Jiunyu Tsai, Hsinchu, TW;
Hung Cho Wang, Taipei, TW;
Tsun Chung Tu, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu, TW;
Abstract
A method for manufacturing a semiconductor structure is disclosed. The method includes: providing a substrate; forming an MRAM structure over the substrate; forming a first dielectric layer over the MRAM structure; forming a stop layer over the first dielectric layer; forming a second dielectric layer over the stop layer; and removing the second dielectric layer, the stop layer and at least a portion of the first dielectric layer through a planarization operation without exposing a top electrode of the MRAM structure. Associated methods are also disclosed.