The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 03, 2017
Filed:
Dec. 03, 2015
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Inventors:
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/45 (2006.01); H01L 29/417 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 29/08 (2006.01); H01L 29/49 (2006.01); H01L 21/28 (2006.01); H01L 29/51 (2006.01);
U.S. Cl.
CPC ...
H01L 29/45 (2013.01); H01L 29/0873 (2013.01); H01L 29/41775 (2013.01); H01L 29/4975 (2013.01); H01L 29/665 (2013.01); H01L 29/66545 (2013.01); H01L 29/66659 (2013.01); H01L 29/66689 (2013.01); H01L 29/78 (2013.01); H01L 29/7816 (2013.01); H01L 21/28079 (2013.01); H01L 21/28088 (2013.01); H01L 21/28185 (2013.01); H01L 29/517 (2013.01);
Abstract
A transistor includes a substrate and a gate over the substrate. The transistor further includes a source and a drain over the substrate on opposite sides of the gate. The transistor further includes a channel region beneath the gate separating the source from the drain, the channel region having a channel width with respect to a surface of the substrate greater than a width of the gate with respect to the surface of the substrate. The transistor further includes a silicide over a first portion of the drain, wherein a second portion of the drain, closer to the gate than the first portion, is an unsilicided region.