The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 03, 2017

Filed:

Jul. 11, 2014
Applicant:

Stats Chippac, Ltd., Singapore, SG;

Inventors:

JoonYoung Choi, Gyeonggi-do, KR;

YoungJoon Kim, Kyoungki-do, KR;

SungWon Cho, Kyoung-gi-Do, KR;

Assignee:

STATS ChipPAC Pte. Ltd., Singapore, SG;

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 24/81 (2013.01); H01L 24/03 (2013.01); H01L 24/05 (2013.01); H01L 24/11 (2013.01); H01L 24/13 (2013.01); H01L 24/97 (2013.01); H01L 24/16 (2013.01); H01L 2224/02126 (2013.01); H01L 2224/0345 (2013.01); H01L 2224/0346 (2013.01); H01L 2224/03452 (2013.01); H01L 2224/03903 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/0508 (2013.01); H01L 2224/05011 (2013.01); H01L 2224/05018 (2013.01); H01L 2224/05027 (2013.01); H01L 2224/05073 (2013.01); H01L 2224/05111 (2013.01); H01L 2224/05124 (2013.01); H01L 2224/05139 (2013.01); H01L 2224/05144 (2013.01); H01L 2224/05147 (2013.01); H01L 2224/05155 (2013.01); H01L 2224/05552 (2013.01); H01L 2224/05558 (2013.01); H01L 2224/05566 (2013.01); H01L 2224/05572 (2013.01); H01L 2224/05573 (2013.01); H01L 2224/05611 (2013.01); H01L 2224/05624 (2013.01); H01L 2224/05639 (2013.01); H01L 2224/05644 (2013.01); H01L 2224/05647 (2013.01); H01L 2224/05655 (2013.01); H01L 2224/10126 (2013.01); H01L 2224/1145 (2013.01); H01L 2224/1146 (2013.01); H01L 2224/1147 (2013.01); H01L 2224/11849 (2013.01); H01L 2224/136 (2013.01); H01L 2224/13007 (2013.01); H01L 2224/13014 (2013.01); H01L 2224/13022 (2013.01); H01L 2224/13076 (2013.01); H01L 2224/13611 (2013.01); H01L 2224/13613 (2013.01); H01L 2224/13616 (2013.01); H01L 2224/13624 (2013.01); H01L 2224/13639 (2013.01); H01L 2224/13644 (2013.01); H01L 2224/13647 (2013.01); H01L 2224/13655 (2013.01); H01L 2224/16238 (2013.01); H01L 2224/81191 (2013.01); H01L 2924/00011 (2013.01); H01L 2924/00013 (2013.01); H01L 2924/00014 (2013.01); H01L 2924/01029 (2013.01); H01L 2924/01322 (2013.01); H01L 2924/12041 (2013.01); H01L 2924/12042 (2013.01); H01L 2924/1306 (2013.01); H01L 2924/13091 (2013.01); H01L 2924/181 (2013.01);
Abstract

A semiconductor wafer has a plurality of semiconductor die with contact pads for electrical interconnect. An insulating layer is formed over the semiconductor wafer. A bump structure is formed over the contact pads. The bump structure has a buffer layer formed over the insulating layer and contact pad. A portion of the buffer layer is removed to expose the contact pad and an outer portion of the insulating layer. A UBM layer is formed over the buffer layer and contact pad. The UBM layer follows a contour of the buffer layer and contact pad. A ring-shaped conductive pillar is formed over the UBM layer using a patterned photoresist layer filled with electrically conductive material. A conductive barrier layer is formed over the ring-shaped conductive pillar. A bump is formed over the conductive barrier layer. The buffer layer reduces thermal and mechanical stress on the bump and contact pad.


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