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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9780008 B1

PDFFull Text
Date of Patent:
Oct. 03, 2017

Filed:

Jul. 12, 2013

Semiconductor device, method for manufacturing the same, and rinsing liquid

Applicant:

Mitsui Chemicals, Inc., Minato-ku, JP;

Inventors:

Shoko Ono, Ichihara, JP;

Yasuhisa Kayaba, Sodegaura, JP;

Hirofumi Tanaka, Sodegaura, JP;

Kazuo Kohmura, Iwakuni, JP;

Tsuneji Suzuki, Chiba, JP;

Assignee:

MITSUI CHEMICALS, INC., Tokyo, JP;

Attorney:

Buchanan, Ingersoll & Rooney PC

Primary Examiner:

Kimberly Rizkallah

Assistant Examiner:

Maria Ligai

Int. Cl.
CPC ...
H01L 23/29 (2006.01); H01L 21/02 (2006.01); H01L 21/3105 (2006.01); H01L 21/768 (2006.01); H01L 21/311 (2006.01); C09K 13/00 (2006.01); H01L 21/56 (2006.01); H01L 23/31 (2006.01); H01L 23/532 (2006.01); C09D 179/02 (2006.01); C08G 73/02 (2006.01);
U.S. Cl.
CPC ...
H01L 23/293 (2013.01); C08G 73/0206 (2013.01); C09D 179/02 (2013.01); C09K 13/00 (2013.01); H01L 21/02063 (2013.01); H01L 21/02093 (2013.01); H01L 21/02118 (2013.01); H01L 21/02164 (2013.01); H01L 21/02203 (2013.01); H01L 21/02282 (2013.01); H01L 21/02334 (2013.01); H01L 21/02343 (2013.01); H01L 21/02362 (2013.01); H01L 21/3105 (2013.01); H01L 21/31058 (2013.01); H01L 21/31133 (2013.01); H01L 21/56 (2013.01); H01L 21/76831 (2013.01); H01L 23/3185 (2013.01); H01L 23/53228 (2013.01); H01L 2924/0002 (2013.01);
Abstract

A method for manufacturing a semiconductor device including: a process of applying a sealing composition for a semiconductor to a semiconductor substrate, to form a sealing layer for a semiconductor on at least the bottom face and the side face of a recess portion of an interlayer insulating layer, the sealing composition including a polymer having a cationic functional group and a weight average molecular weight of from 2,000 to 1,000,000, each of the content of sodium and the content of potassium in the sealing composition being 10 ppb by mass or less on an elemental basis; and a process of subjecting a surface of the semiconductor substrate at a side at which the sealing layer has been formed to heat treatment of from 200° C. to 425° C., to remove at least a part of the sealing layer.

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