The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 03, 2017
Filed:
Apr. 17, 2013
Applicant:
Tokyo Electron Limited, Tokyo, JP;
Inventors:
Assignee:
TOKYO ELECTRON LIMITED, Tokyo, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); C23C 16/24 (2006.01); C23C 16/511 (2006.01); C23C 16/455 (2006.01); H01J 37/32 (2006.01); H01L 21/223 (2006.01); C23C 16/52 (2006.01); H01L 21/263 (2006.01); H01L 21/30 (2006.01); H01L 21/67 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02532 (2013.01); C23C 16/24 (2013.01); C23C 16/45538 (2013.01); C23C 16/511 (2013.01); C23C 16/52 (2013.01); H01J 37/3222 (2013.01); H01J 37/32266 (2013.01); H01J 37/32357 (2013.01); H01J 37/32422 (2013.01); H01J 37/32449 (2013.01); H01L 21/0245 (2013.01); H01L 21/0262 (2013.01); H01L 21/02576 (2013.01); H01L 21/02595 (2013.01); H01L 21/02658 (2013.01); H01L 21/02664 (2013.01); H01L 21/2236 (2013.01); H01L 21/263 (2013.01); H01L 21/3003 (2013.01); H01L 21/67069 (2013.01); H01J 2237/334 (2013.01); H01J 2237/3321 (2013.01);
Abstract
Disclosed is a plasma processing method including: growing a polycrystalline silicon layer on a processing target base body; and exposing the polycrystalline silicon layer to hydrogen radicals by supplying a processing gas containing hydrogen into a processing container that accommodates the processing target base body including the polycrystalline silicon layer grown thereon and radiating microwaves within the processing container to generate the hydrogen radicals.