The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 03, 2017

Filed:

Oct. 08, 2015
Applicant:

Infineon Technologies Ag, Neubiberg, DE;

Inventors:

Johannes Freund, Deisenhofen, DE;

Helmut Oefner, Zorneding, DE;

Hans-Joachim Schulze, Taufkirchen, DE;

Assignee:

Infineon Technologies AG, Neubiberg, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/02 (2006.01); H01L 21/265 (2006.01); H01L 21/66 (2006.01); H01L 23/544 (2006.01); H01L 21/263 (2006.01); H01L 21/324 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02008 (2013.01); H01L 21/263 (2013.01); H01L 21/26533 (2013.01); H01L 21/324 (2013.01); H01L 22/12 (2013.01); H01L 23/544 (2013.01); H01L 2223/54413 (2013.01); H01L 2223/54426 (2013.01); H01L 2223/54433 (2013.01); H01L 2223/54493 (2013.01);
Abstract

An embodiment of a method of manufacturing semiconductor wafers comprises determining at least one material characteristic for at least two positions of a semiconductor ingot. A notch or a flat is formed in a semiconductor ingot extending along an axial direction. A plurality of markings is formed in the semiconductor ingot. At least some of the plurality of markings at different positions along the axial direction are distinguishable from each other by a characteristic feature set depending on the at least one material characteristic. The semiconductor ingot is then sliced into semiconductor wafers.


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