The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 03, 2017
Filed:
Jun. 22, 2015
Applicant:
Micron Technology, Inc., Boise, ID (US);
Inventors:
Fabio Pellizzer, Cornate d'Adda, IT;
Roberto Bez, Milan, IT;
Ferdinando Bedeschi, Biassono, IT;
Roberto Gastaldi, Agrate Brianza, IT;
Assignee:
Micron Technology, Inc., Boise, ID (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 13/00 (2006.01); G11C 11/56 (2006.01); H01L 27/24 (2006.01); H01L 45/00 (2006.01);
U.S. Cl.
CPC ...
G11C 13/0004 (2013.01); G11C 11/56 (2013.01); G11C 11/5678 (2013.01); G11C 13/004 (2013.01); G11C 13/0069 (2013.01); H01L 27/2427 (2013.01); H01L 27/2463 (2013.01); G11C 2013/0054 (2013.01); G11C 2213/79 (2013.01); H01L 45/04 (2013.01); H01L 45/06 (2013.01); H01L 45/126 (2013.01); H01L 45/1233 (2013.01); H01L 45/143 (2013.01); H01L 45/144 (2013.01);
Abstract
A phase change memory device with memory cells () formed by a phase change memory element () and a selection switch (). A reference cell () formed by an own phase change memory element () and an own selection switch () is associated to a group () of memory cells to be read. An electrical quantity of the group of memory cells is compared with an analogous electrical quantity of the reference cell, thereby compensating any drift in the properties of the memory cells.