The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 26, 2017
Filed:
Oct. 28, 2016
Applicant:
United Microelectronics Corp., Hsin-Chu, TW;
Inventors:
Assignee:
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/115 (2017.01); H01L 29/792 (2006.01); H01L 29/10 (2006.01); H01L 29/78 (2006.01); H01L 27/1158 (2017.01);
U.S. Cl.
CPC ...
H01L 29/792 (2013.01); H01L 29/1037 (2013.01); H01L 29/7827 (2013.01); H01L 27/1158 (2013.01); H01L 29/7926 (2013.01);
Abstract
A memory device includes: a substrate; a channel layer on the substrate, in which the channel layer includes a T-shape having a horizontal portion with a first end and a second end and a vertical portion having a third end; a gate structure on a side of the vertical portion; an oxide-nitride-oxide (ONO) layer between the gate structure and the vertical portion; a source region on the first end of the horizontal portion; and a drain region on the third end of the vertical portion.