The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 26, 2017
Filed:
Dec. 11, 2016
Qualcomm Incorporated, San Diego, CA (US);
Changhan Hobie Yun, San Diego, CA (US);
Daeik Daniel Kim, Del Mar, CA (US);
Chengjie Zuo, San Diego, CA (US);
Jonghae Kim, San Diego, CA (US);
Mario Francisco Velez, San Diego, CA (US);
Donald William Kidwell, Jr., Campbell, CA (US);
Jon Bradley Lasiter, Stockton, CA (US);
Kwan-Yu Lai, Campbell, CA (US);
Jitae Kim, Mountain View, CA (US);
Ravindra Vaman Shenoy, Dublin, CA (US);
QUALCOMM Incorporated, San Diego, CA (US);
Abstract
Provided are space-efficient capacitors that have a higher quality factor than conventional designs and improve coupling of electrical energy from a through-glass via (TGV) to a dielectric. For example, provided is a TGV having a non-rectangular cross-section, where one end of the TGV is coupled to a first metal plate. A dielectric material is formed on the first metal plate. A second metal plate is formed on the dielectric material in a manner that overlaps at least a portion of the first metal plate to form at least one overlapped region of the dielectric material. At least a part of the perimeter of the overlapped region is non-planar. The overlapped region can be formed in a shape of a closed ring, in a plurality of portions of a ring shape, in substantially a quarter of a ring shape, and/or in substantially a half of a ring shape.