The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 26, 2017
Filed:
Aug. 24, 2012
Applicants:
Chieh-chih Chen, Hukou Shiang, TW;
Cheng-chi Lin, Toucheng Township, Yilan County, TW;
Shih-chin Lien, New Taipei, TW;
Shyi-yuan Wu, Hsinchu, TW;
Inventors:
Chieh-Chih Chen, Hukou Shiang, TW;
Cheng-Chi Lin, Toucheng Township, Yilan County, TW;
Shih-Chin Lien, New Taipei, TW;
Shyi-Yuan Wu, Hsinchu, TW;
Assignee:
MACRONIX INTERNATIONAL CO., LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 27/088 (2006.01); H01L 21/761 (2006.01); H01L 29/66 (2006.01); H01L 21/8234 (2006.01); H01L 29/423 (2006.01); H01L 29/06 (2006.01); H01L 29/08 (2006.01);
U.S. Cl.
CPC ...
H01L 27/088 (2013.01); H01L 21/761 (2013.01); H01L 21/823481 (2013.01); H01L 29/66681 (2013.01); H01L 29/7816 (2013.01); H01L 21/823418 (2013.01); H01L 29/0634 (2013.01); H01L 29/0696 (2013.01); H01L 29/0878 (2013.01); H01L 29/42368 (2013.01);
Abstract
A semiconductor structure and a method for manufacturing the same are provided. The semiconductor structure comprises a substrate, a device region, a first doped region and a gate structure. The first doped region is formed in the substrate adjacent to the device region. The gate structure is on the first doped region. The first doped region is overlapped the gate structure.