The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 26, 2017
Filed:
Jan. 19, 2016
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Jong-Jin Lee, Seoul, KR;
Rak-Hwan Kim, Suwon-si, KR;
Byung-Hee Kim, Seoul, KR;
Jin-Nam Kim, Anyang-si, KR;
Tsukasa Matsuda, Seongnam-si, KR;
Wan-Soo Park, Suwon-si, KR;
Nae-In Lee, Seoul, KR;
Jae-Won Chang, Hwaseong-si, KR;
Eun-Ji Jung, Hwaseong-si, KR;
Jeong-Ok Cha, Seoul, KR;
Jae-Won Hwang, Seongnam-si, KR;
Jung-Ha Hwang, Gunpo-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
In a method of forming a wiring structure, a lower structure is formed on a substrate. An insulating interlayer is formed on the lower structure. The insulating interlayer is partially removed to form at least one via hole and a dummy via hole. An upper portion of the insulating interlayer is partially removed to form a trench connecting the via hole and the dummy via hole. A first metal layer filling the via hole and the dummy via hole is formed. A second metal layer filling the trench is formed on the first metal layer.