The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 26, 2017

Filed:

Feb. 10, 2016
Applicant:

Hitachi High-technologies Corporation, Minato-ku, Tokyo, JP;

Inventors:

Hiroshi Oba, Tokyo, JP;

Yasuhiko Sugiyama, Tokyo, JP;

Mamoru Okabe, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 37/08 (2006.01); H01J 37/32 (2006.01); H01J 37/20 (2006.01); H01J 27/16 (2006.01); H01J 37/06 (2006.01);
U.S. Cl.
CPC ...
H01J 37/32522 (2013.01); H01J 27/16 (2013.01); H01J 37/06 (2013.01); H01J 37/08 (2013.01); H01J 37/20 (2013.01); H01J 37/321 (2013.01); H01J 37/3211 (2013.01); H01J 37/32357 (2013.01); H01J 37/32422 (2013.01); H01J 37/32568 (2013.01); H01J 37/32807 (2013.01);
Abstract

A plasma ion source includes: a gas introduction chamber, into which raw gas is introduced; a plasma generation chamber connected to the gas introduction chamber and made of a dielectric material; a coil wound along an outer circumference of the plasma generation chamber and to which high-frequency power is applied; an envelope surrounding the gas introduction chamber, the plasma generation chamber and the coil; and insulating liquid filled inside the gas introduction chamber, the plasma generation chamber and the envelope to immerse the coil and having an dielectric strength voltage relatively greater than that of the envelope and the same dielectric dissipation factor as the plasma generation chamber.


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