The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 26, 2017

Filed:

Nov. 10, 2011
Applicants:

Yuko Otani, Tokyo, JP;

Yuta Urano, Yokohama, JP;

Toshifumi Honda, Yokohama, JP;

Inventors:

Yuko Otani, Tokyo, JP;

Yuta Urano, Yokohama, JP;

Toshifumi Honda, Yokohama, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01N 21/00 (2006.01); H01J 37/26 (2006.01); G01N 21/88 (2006.01); G01N 21/95 (2006.01);
U.S. Cl.
CPC ...
H01J 37/261 (2013.01); G01N 21/8806 (2013.01); G01N 21/9501 (2013.01);
Abstract

Disclosed are a method and an apparatus for observing defects by using an SEM, wherein, in order to observe defects on a wafer at high speed and high sensitivity, positional information of defects on a sample, which has been optically inspected and detected by other inspecting apparatus, and information of the conditions of the optical inspection having been performed by other inspecting apparatus are obtained, and optically detecting the defects on the sample placed on a table, on the basis of the thus obtained information, and on the basis of the detected positional information of the defect on the sample placed on the table, the positional information of the defect having been inspected and detected by other inspecting apparatus is corrected, then, the defects on the sample placed on the table are observed by the SEM using the thus corrected positional information of the defects.


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