The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 26, 2017
Filed:
Feb. 10, 2016
Applicant:
Hitachi High-technologies Corporation, Minato-ku, Tokyo, JP;
Inventors:
Assignee:
HITACHI HIGH-TECHNOLOGIES CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 37/08 (2006.01); H05H 1/30 (2006.01); H05H 1/46 (2006.01);
U.S. Cl.
CPC ...
H01J 37/08 (2013.01); H05H 1/30 (2013.01); H05H 1/46 (2013.01); H01J 2237/006 (2013.01); H01J 2237/061 (2013.01); H05H 2001/4667 (2013.01);
Abstract
A plasma ion source includes: a gas introduction chamber, into which raw gas is introduced; an insulation member provided in the gas introduction chamber; a plasma generation chamber connected to the gas introduction chamber; a coil that is wound along an outer circumference of the plasma generation chamber and to which high-frequency power is applied; and an electrode arranged at a boundary between the gas introduction chamber and the plasma generation chamber and having a plurality of through-holes formed therein, wherein a size of the through-holes is smaller than a length of a plasma sheath.