The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 26, 2017

Filed:

May. 18, 2015
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;

Inventors:

Ya-Ling Cheng, Yilan, TW;

Ching-Yu Chang, Hsin-Chu, TW;

Chien-Chih Chen, Tainan, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/38 (2006.01); G03F 7/42 (2006.01); G03F 7/038 (2006.01); G03F 7/40 (2006.01);
U.S. Cl.
CPC ...
G03F 7/422 (2013.01); G03F 7/038 (2013.01); G03F 7/38 (2013.01); G03F 7/40 (2013.01);
Abstract

Methods for performing a photolithographic process are disclosed. The methods facilitate the removal of photosensitive from a wafer after the photosensitive has been used as an etch mask. The photosensitive may be a negative tone photosensitive that undergoes a cross-linking process on exposure to electromagnetic energy. By limiting the cross-linking through a reduced post-exposure bake temperature and/or through reduced cross-linker loading, the photoresist, or at least a portion thereof, may have a reduced solvent strip resistance. Because of the reduced solvent strip resistance, a portion of the photosensitive may be removed using a solvent strip. After the solvent strip, a dry etch may be performed to remove remaining portions of the photoresist.


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