logo

For the Inventor, By the Inventor

The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9772555 B1

PDFFull Text
Date of Patent:
Sep. 26, 2017

Filed:

Feb. 19, 2016

Methods of forming patterns using photoresists

Applicant:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Inventors:

Cheol-Hong Park, Seoul, KR;

Sang-Yoon Woo, Gwangmyeong-si, KR;

Cha-Won Koh, Yongin-si, KR;

Hyun-Woo Kim, Seongnam-si, KR;

Sang-Min Park, Seoul, KR;

Assignee:

SAMSUNG ELECTRONICS CO., LTD., Suwon-Si, Gyeonggi-Do, KR;

Attorney:

Lee & Morse, P.C.

Primary Examiner:

Amanda C Walke

Int. Cl.
CPC ...
G03F 7/11 (2006.01); G03F 7/40 (2006.01); G03F 7/20 (2006.01); H01L 21/027 (2006.01); H01L 21/033 (2006.01); G03F 7/32 (2006.01); H01L 21/308 (2006.01); H01L 21/311 (2006.01); H01L 21/3213 (2006.01); H01L 21/768 (2006.01); H01L 27/108 (2006.01);
U.S. Cl.
CPC ...
G03F 7/20 (2013.01); G03F 7/11 (2013.01); G03F 7/32 (2013.01); H01L 21/0276 (2013.01); H01L 21/0335 (2013.01); H01L 21/0337 (2013.01); H01L 21/0338 (2013.01); H01L 21/3081 (2013.01); H01L 21/31144 (2013.01); H01L 21/32139 (2013.01); H01L 21/76802 (2013.01); H01L 27/10876 (2013.01);
Abstract

In a method of forming a pattern, a lower coating layer and a photoresist layer are sequentially formed on an object layer. An exposure process may be performed such that the photoresist layer is divided into an exposed portion and a non-exposed portion. A portion of the lower coating layer overlapping or contacting the exposed portion is at least partially transformed into a polarity conversion portion that has a polarity substantially identical to that of the exposed portion. The non-exposed portion of the photoresist layer is selectively removed.

Find Patent Forward Citations

Loading…