The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 19, 2017
Filed:
Jul. 31, 2015
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Abstract
Various methods include providing a substrate, forming a projection extending upwardly from the substrate, the projection having a channel region therein, and forming a gate structure engaging the projection adjacent to the channel region, the gate structure having spaced first and second conductive layers and a strain-inducing conductive layer disposed between the first and second conductive layers. The method also includes forming epitaxial growths on portions of the projection at each side of the gate structure, the epitaxial growths imparting a first strain to the channel region, and imparting a second strain to the channel region, including performing at least one stress memorization technique on the gate structure such that the strain-inducing conductive layer imparts the second strain to the channel region, and removing the capping layer, wherein the imparting the second strain is carried out in a manner that imparts tensile strain to the channel region.