The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 19, 2017
Filed:
Sep. 22, 2015
Qualcomm Incorporated, San Diego, CA (US);
Shiqun Gu, San Diego, CA (US);
Daeik Daniel Kim, Del Mar, CA (US);
Matthew Michael Nowak, San Diego, CA (US);
Jonghae Kim, San Diego, CA (US);
Changhan Hobie Yun, San Diego, CA (US);
Je-Hsiung Jeffrey Lan, San Diego, CA (US);
David Francis Berdy, San Diego, CA (US);
QUALCOMM Incorporated, San Diego, CA (US);
Abstract
An integrated circuit (IC) includes a first semiconductor device on a glass substrate. The first semiconductor device includes a first semiconductive region of a bulk silicon wafer. The IC includes a second semiconductor device on the glass substrate. The second semiconductor device includes a second semiconductive region of the bulk silicon wafer. The IC includes a through substrate trench between the first semiconductive region and the second semiconductive region. The through substrate trench includes a portion disposed beyond a surface of the bulk silicon wafer.