The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 19, 2017
Filed:
Mar. 15, 2016
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Wei-Shuo Ho, New Taipei, TW;
Tsung-Yu Chiang, New Taipei, TW;
Chia-Chun Liao, Hsinchu, TW;
Kuang-Hsin Chen, Jung-Li, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
A method for forming a semiconductor device is provided. The method includes providing a semiconductor substrate with an insulating layer formed thereon. The method includes forming a gate dielectric layer in the first opening and the second opening. The method includes forming a film over the gate dielectric layer. The method includes forming a first work function metal layer in the first opening. The method includes depositing a second work function metal layer in the first opening and the second opening and in direct contact with the first work function metal layer in the first opening and the film in the second opening. A first deposition rate of the second work function metal layer over the first work function metal layer is greater than a second deposition rate of the second work function metal layer over the film.